Webinar Series:
Proximity Effect in E-Beam Lithography

Webinar Series Summary:

The webinar series will explain one of the most important techniques in advanced e-beam lithography. Modern E-beam systems are able to form small spot sizes in nm range.  In principle this enables to achieve feature sizes in nm-range. In practice this is limited by physics, chemistry and tool limitations such as:

  1. The beam size is in nm range only for small beam currents (Coulomb inter-electron repulsion, chromatic aberrations, Boersch effect), leading to long exposure time.
  2. Electrons scatter when they interact with the resist, further increasing the effective beam size.
  3. The pattern transfer is limiting the minimum resist thickness. Electron scattering from the substrate limits to small exposure area and relatively isolated feature to avoid the influence of neighborhood exposure.

All these fundamental effects are summarized as electron-proximity-effect and limit the resolution, quality (CD and feature accuracy) and throughput for practical application. The technique for optimizing e-beam lithography for those effects is called Proximity Effect Correction (PEC) and has become standard in nanofabrication.

The webinar will be hosted by the GenISys key experts on PEC and are open for question and discussion.  We will be using BEAMER, TRACER & LAB for demonstrating the technology, application and solution life.

You will learn the physics and models behind PEC, related parameter and settings, application specific optimization and also cover advanced correction like contrast enhancement using Over-Dose-Under-Size (ODUS) using shape PEC, CD (greyscale) lithography using 3D surface PEC and correction for T-Gate.